PROBLEM 3.91
KNOWN: Process for growing thin, photovoltaic grade silicon sheets. Sheet dimensions, ambient
temperature and heat transfer coefficient.
FIND: The velocity at which the silicon sheet can be extracted from the pool of molten silicon.
SCHEMATIC:
ASSUMPTIONS: (1) Steady–state, one-dimensional conditions, (2) Negligible radiation heat
transfer, (3) Silicon sheet behaves as an infinite fin, (4) Constant properties, (5) Neglect advection
inside the silicon sheet, (6) Neglect the presence of the strings, (7) Molten silicon is isothermal at the
melting point (1685 K).
PROPERTIES: Table A-1, Silicon (
= (1685 K + 723 K)/2 = 1204 K
1200 K): k = 25.7
W/m⋅K,
ρ
= 2330 kg/m3, hsl = 1.8 × 106 J/kg (given).
ANALYSIS: The velocity is expected to be very small. Therefore, heat transfer within the silicon
sheet may be considered to be by conduction only. In addition, thermal energy is generated due to
solidification at the solid-liquid interface, and must be removed by conduction along the silicon sheet.
Therefore,