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Exam
Name___________________________________
MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question.
1)
The easiest way to bias a JFET in the ohmic region is with
1)
A)
gate bias.
B)
self-bias.
C)
voltage-divider bias.
D)
source bias.
Answer:
C
Explanation:
A)
B)
C)
D)
2)
The simplest method to bias a D-MOSFET is to
2)
A)
set VGS = +4.
B)
set VGS = - 4.
C)
select the correct value RD.
D)
set VGS = 0.
Answer:
D
Explanation:
A)
B)
C)
D)
3)
One advantage of voltage-divider bias is that the dependency of drain current ID, on the range of
Q-points is
3)
A)
reduced.
B)
increased.
C)
not affected.
Answer:
A
Explanation:
A)
B)
C)
4)
For proper operation, an n-channel E-MOSFET should be biased so that VGS is
4)
A)
negative.
B)
positive.
C)
-4 V.
D)
either positive or negative.
Answer:
B
Explanation:
A)
B)
C)
D)
1
5)
Refer to (c) in the figure above. This symbol identifies
5)
A)
a p-channel E-MOSFET.
B)
a p-channel D-MOSFET.
C)
an n-channel D-MOSFET.
D)
an n-channel E-MOSFET.
Answer:
D
Explanation:
A)
B)
C)
D)
6)
Refer to (a) in the figure above. This symbol identifies
6)
A)
an n-channel D-MOSFET.
B)
a p-channel D-MOSFET.
C)
a p-channel E-MOSFET.
D)
an n-channel E-MOSFET.
Answer:
A
Explanation:
A)
B)
C)
D)
7)
Refer to (b) in the figure above. If ID= 2 mA, the value of VDS is
7)
A)
15.6 V.
B)
20 V.
C)
10 V.
D)
4.4 V.
Answer:
A
Explanation:
A)
B)
C)
D)
2
8)
Refer to the figure above. Calculate the value of VDS.
8)
A)
2 V
B)
4 V
C)
0 V
D)
-2 V
Answer:
A
Explanation:
A)
B)
C)
D)
9)
A V-MOSFET device operates in
9)
A)
a JFET mode.
B)
in either enhancement or depletion mode.
C)
the depletion mode.
D)
the enhancement mode.
Answer:
D
Explanation:
A)
B)
C)
D)
10)
Refer to (d) in the figure above. This symbol identifies
10)
A)
an n-channel D-MOSFET.
B)
an n-channel E-MOSFET.
C)
a p-channel D-MOSFET.
D)
a p-channel E-MOSFET.
Answer:
D
Explanation:
A)
B)
C)
D)
3
11)
The gate-source junction of a JFET is
11)
A)
a low resistance path for dc current when reverse-biased.
B)
normally not biased.
C)
normally forward-biased.
D)
normally reverse-biased.
Answer:
D
Explanation:
A)
B)
C)
D)
12)
VDS equals pinch-off voltage divided by the
12)
A)
ideal drain current.
B)
gate current.
C)
drain current for zero gate voltage.
D)
base current.
Answer:
C
Explanation:
A)
B)
C)
D)
13)
Refer to the figure above. In this circuit, VGS is biased correctly for proper operation. This means
that
VGS is
13)
A)
positive.
B)
either negative or positive.
C)
0 V.
D)
negative.
Answer:
D
Explanation:
A)
B)
C)
D)
14)
When operated in the ohmic area, a JFET acts like a(n)
14)
A)
voltage source.
B)
insulator.
C)
small resistor.
D)
current source.
Answer:
C
Explanation:
A)
B)
C)
D)
4
15)
The FET that has no physical channel is
15)
A)
the JFET.
B)
the D-MOSFET.
C)
the E-MOSFET.
D)
None of the above.
Answer:
C
Explanation:
A)
B)
C)
D)
16)
A ________ change in VDS will produce a ________ change in ID.
16)
A)
large, large
B)
small, large
C)
small, small
D)
large, small
Answer:
D
Explanation:
A)
B)
C)
D)
17)
Refer to (b) in the figure above. This symbol identifies
17)
A)
an n-channel D-MOSFET.
B)
a p-channel E-MOSFET.
C)
a p-channel D-MOSFET.
D)
an n-channel E-MOSFET.
Answer:
C
Explanation:
A)
B)
C)
D)
18)
To get a negative gate-source voltage in a self-biased JFET circuit, you must use a
18)
A)
voltage divider.
B)
ground.
C)
source resistor.
D)
negative gate supply voltage.
Answer:
C
Explanation:
A)
B)
C)
D)
5
19)
The transconductance curve of a JFET is
19)
A)
symmetrical.
B)
nonlinear.
C)
linear.
D)
hyperbolic.
Answer:
B
Explanation:
A)
B)
C)
D)
20)
Field effect transistors are also known as
20)
A)
bipolar devices.
B)
three-charge carrier devices.
C)
unipolar devices.
D)
None of the above.
Answer:
C
Explanation:
A)
B)
C)
D)
21)
IDSS can be defined as the
21)
A)
maximum drain current with the source shorted.
B)
minimum possible drain current.
C)
maximum current drain-to-source with a shorted gate.
D)
maximum possible current with the drain shorted to the source.
Answer:
C
Explanation:
A)
B)
C)
D)
22)
For an enhancement-mode MOSFET, the minimum VGS required to produce drain current is
called the
22)
A)
threshold voltage, designated VGS(th).
B)
IDss.
C)
blocking voltage, designated VB.
D)
breakover voltage.
Answer:
A
Explanation:
A)
B)
C)
D)
23)
The transconductance curve of a JFET is a graph of
23)
A)
IC versus VCE.
B)
ID versus VGS.
C)
IS versus VDS.
D)
ID× RDS.
Answer:
B
Explanation:
A)
B)
C)
D)
6
